IRF7799L2TR1PBF datasheet, mosfet equivalent, International Rectifier

Features and benefits

5.0V 10 10 1 5.0V Tj = 25°C ≤60µs PULSE WIDTH 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 1 Tj = 175°C ≤60µs PULSE WIDTH 0.1 0.1 1 10 100 V DS, Drain-to-Source.

Application

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .

Description

The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The D.

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